bdx62 ? a ? b ? c 24/10/2012 comset semiconductors 1 | 4 p p n n p p silicon darlington power transistor the bdx62, BDX62A, bdx62b and bdx62c are mounted in to-3 metal package. high current power darlingtons designed for power amplification and switching applications. the complementary npn are bdx63, bdx63a, bdx63b, bdx63c. compliance to rohs. absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage bdx62 -60 v BDX62A -80 bdx62b -100 bdx62c -120 v cev collector-emittervoltage v be =-1.5 v bdx62 -60 v BDX62A -80 bdx62b -100 bdx62c -120 v ebo emitter-base voltage -5.0 v i c collector current i c ( rms ) -8 a i cm -12 i b base current -0.15 a p t power dissipation @ t c = 25 90 w t j junction temperature -55 to +200 c t s storage temperature thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction to case 1.94 c/w www.datasheet.net/ datasheet pdf - http://www..co.kr/
bdx62 ? a ? b ? c 24/10/2012 comset semiconductors 2 | 4 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v ceo(sus) collector-emitter breakdown voltage (*) i c =-0.1 a i b =0 l=25mh bdx62 -60 - - v BDX62A -80 - - bdx62b -100 - - bdx62c -120 - - i ceo collector cutoff current v ce =-30 v bdx62 - - -0.5 ma v ce =-40 v BDX62A - - v ce =-50 v bdx62b - - v ce =-60 v bdx62c - - i ebo emitter cutoff current v be =-5 v bdx62 - - -5.0 ma BDX62A bdx62b bdx62c i cbo collector-base cutoff current v cbo =-60 v bdx62 - - -0.2 - v cbo =-40 v t case =200c - - -2 v cbo =-80 v BDX62A - - -0.2 v cbo =-50 v t case =200c - - -2 v cbo =-100 v bdx62b - - -0.2 v cbo =-60 v t case =200c - - -2 v cbo =-120 v bdx62c - - -0.2 v cbo =-70 v t case =200 - - -2 v ce(sat) collector-emitter saturation voltage (*) i c =-3.0 a i b =-12 ma bdx62 - - -2 v BDX62A bdx62b bdx62c v f forward voltage (pulse method) i f =3 a bdx62 - - -2.5 v BDX62A bdx62b bdx62c v be base-emitter voltage (*) i c =-3.0 a v ce =-3v bdx62 - - - v BDX62A bdx62b bdx62c www.datasheet.net/ datasheet pdf - http://www..co.kr/
bdx62 ? a ? b ? c 24/10/2012 comset semiconductors 3 | 4 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit f hfe cut-off frequency v ce =3 v ic =3 a bdx62 - 100 - khz BDX62A bdx62b bdx62c f t transition frequency v ce =-3 v, i c =-3 a f=1 mhz bdx62 - 7 - mhz BDX62A bdx62b bdx62c h fe d.c. current gain (*) v ce =-3 v, i c =-0.5 a bdx62 - 1500 - - BDX62A bdx62b bdx62c v ce =-3 v, i c =-3 a bdx62 1000 - - BDX62A bdx62b bdx62c v ce =-3 v, i c =-8 a bdx62 - 750 - BDX62A bdx62b bdx62c (*) pulse width 300 s, duty cycle 2.0% www.datasheet.net/ datasheet pdf - http://www..co.kr/
bdx62 ? a ? b ? c 24/10/2012 comset semiconductors 4 | 4 mechanical data case to-3 revised september 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 11 13.10 b 0.97 1.15 c 1.5 1.65 d 8.32 8.92 f 19 20 g 10.70 11.1 n 16.50 17.20 p 25 26 r 4 4.09 u 38.50 39.30 v 30 30.30 pin 1 : base pin 2 : emitter case : collector www.datasheet.net/ datasheet pdf - http://www..co.kr/
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